Silicon Carbide SiC

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Silicon Carbide Wafer SiC, paʻakikī loa, hana ʻia i ka hui crystalline o ke silikoni a me ke kalapona ma ke ʻano MOCVD, a hōʻike ʻia.ʻO kona ākea ākea ākea a me nā ʻano maikaʻi ʻē aʻe o ka coefficient haʻahaʻa o ka hoʻonui ʻana i ka wela, ke kiʻekiʻe o ka hana ʻana, ka wela wela maikaʻi, ka hoʻololi haʻahaʻa a me ka hoʻoiho ʻana, ʻoi aku ka maikaʻi o ka ikehu, kiʻekiʻe thermal conductivity a ʻoi aku ka ikaika o ka haki ʻana o ke kahua uila, a me nā au i ʻoi aku ka nui. kūlana.Hiki ke hāʻawi ʻia ʻo Silicon Carbide SiC ma Western Minmetals (SC) Corporation i ka nui o 2″ 3'4” a me 6″ (50mm, 75mm, 100mm, 150mm) anawaena, me ka n-type, semi-insulating a dummy wafer no ka ʻoihana. a me ka noiʻi hoʻokolohua. ʻO kēlā me kēia kikoʻī maʻamau no ka hopena kūpono i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa.

Nā noi

ʻO ke kūlana kiʻekiʻe 4H / 6H Silicon Carbide SiC wafer he mea kūpono ia no ka hana ʻana i nā mea ʻokiʻoki ʻoi aku ka wikiwiki, kiʻekiʻe-mehana & kiʻekiʻe-voltage uila e like me Schottky diodes & SBD, kiʻekiʻe-mana hoʻololi MOSFETs & JFETs, etc. He mea makemake pū kekahi i ka noiʻi a me ka hoʻomohala ʻana i nā transistors bipolar insulated-gate a me thyristors.Ma ke ʻano he mea hana semiconducting hou, ʻo Silicon Carbide SiC wafer ka mea hoʻolaha wela maikaʻi i nā ʻāpana LED mana kiʻekiʻe, a i ʻole he substrate paʻa a kaulana no ka ulu ʻana o ka papa GaN i makemake ʻia i ka ʻimi ʻepekema e hiki mai ana.

Ninau i keia manawa

Nā kikoʻī

Nā huaʻōlelo

Hōʻike ʻenehana

Silicon Carbide SiC

Silicon Carbide SiCma Western Minmetals (SC) Corporation hiki ke hāʻawi ʻia i ka nui o 2 ″ 3' 4 a me 6 ″ (50mm, 75mm, 100mm, 150mm) anawaena, me ke ʻano n-type, semi-insulating a dummy wafer no ka noi ʻoihana a me ka noi. .ʻO nā kiko'ī i hoʻonohonohoʻia no ka hopena maikaʻi loa i kā mākou mea kūʻai ma ka honua holoʻokoʻa.

Huahelu Linear	SiC
Kaumaha Molekala	40.1
ʻO ka hana aniani	Wurtzite
Ka nana aku	Paʻa
Lae hehee	3103±40K
Lae paila	N/A
ʻO ka mānoanoa ma 300K	3.21 g/cm³
ʻAha ikehu	(3.00-3.23) eV
Ke kū'ē kūʻokoʻa	>1E5 Ω-cm
Helu CAS	409-21-2
Helu EC	206-991-8

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Nui SiC	2"	3"	4"	6"
2	Anawaena mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	ʻAno ulu	MOCVD	MOCVD	MOCVD	MOCVD
4	ʻAno Conductivity	4H-N, 6H-N, 4H-SI, 6H-SI
5	Kū'ē Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Kūlana	0°±0.5°;4.0° i ka <1120>
7	Mānoanoa μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Wahi Palahalaha	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	ʻO ka lōʻihi pālahalaha mua mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Wahi Palahalaha lua	Ke alo o ka silikoni i luna: 90°, ka uaki mai ka palahalaha nui ± 5.0°
11	Ka lōʻihi papa lua mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Kūlou μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Hoʻokuʻu ʻia ʻo Edge mm max	1	2	3	3
16	Micropipe Density cm-2	<5, ʻoihana;<15, lab;<50, hoʻopunipuni
17	Wehewehe cm-2	<3000, ʻoihana;<20000, lab;<500000, hoʻopunipuni
18	ʻAʻohe ʻili nm max	1(Poli ʻia), 0.5 (CMP)
19	māwae	ʻAʻole, no ka papa hana ʻoihana
20	Papa Hexagonal	ʻAʻole, no ka papa hana ʻoihana
21	Nā ʻōpala	≤3mm, ka lōʻihi holoʻokoʻa ma mua o ke anawaena substrate
22	ʻOpi ʻEke	ʻAʻole, no ka papa hana ʻoihana
23	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i loko o ka ʻeke alumini.

Silicon Carbide SiC 4H/6HʻO ka wafer kiʻekiʻe ka mea kūpono no ka hana ʻana i nā mea ʻokiʻoki ʻoi aku ka wikiwiki, kiʻekiʻe-mehana & kiʻekiʻe-voltage uila e like me Schottky diodes & SBD, kiʻekiʻe-mana hoʻololi MOSFETs & JFETs, etc. He mea makemake hoʻi i ka noiʻi a me ka hoʻomohala ʻana i nā transistors bipolar insulated-gate a me thyristors.Ma ke ʻano he mea hana semiconducting hou, ʻo Silicon Carbide SiC wafer ka mea hoʻolaha wela maikaʻi i nā ʻāpana LED mana kiʻekiʻe, a i ʻole he substrate paʻa a kaulana no ka ulu ʻana o ka papa GaN i makemake ʻia i ka ʻimi ʻepekema e hiki mai ana.