Indium Phosphide InP

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Indium Phosphide InP,CAS No.22398-80-7, wahi hoohehee 1600°C, he semiconductor hui hui lua o ka ohana III-V, he kinona aniani cubic “zinc blende” maka, like me ka hapa nui o ka III-V semiconductor, ua synthesized mai. 6N 7N indium maʻemaʻe kiʻekiʻe a me ka mea phosphorus, a ulu i loko o ka aniani hoʻokahi e ka ʻenehana LEC a i ʻole VGF.Hoʻopili ʻia ka kristal Indium Phosphide e lilo i n-type, p-type a i ʻole semi-insulating conductivity no ka hana hou ʻana i ka wafer a hiki i ka 6 ″ (150 mm) anawaena, e hōʻike ana i kona ʻāpana kikoʻī, ʻoi aku ka kiʻekiʻe o ka neʻe ʻana o nā electrons a me nā lua a me ka wela wela. conductivity.Hiki ke hāʻawi ʻia ka Indium Phosphide InP Wafer prime a i ʻole ka papa hōʻike ma Western Minmetals (SC) Corporation me ka p-type, n-type a me semi-insulating conductivity i ka nui o 2 "3" 4" a me 6" (a hiki i 150mm) anawaena, kuhikuhi <111> a i ʻole <100> a me ka mānoanoa 350-625um me ka hoʻopau ʻana o ka ʻili o ke kaʻina hana i kālai ʻia a i ʻole ʻia a mākaukau Epi.I kēia manawa, loaʻa ka Indium Phosphide Single Crystal ingot 2-6 ″ ma ke noi.ʻO ka Polycrystalline Indium Phosphide InP a i ʻole Multi-crystal InP ingot i ka nui o D(60-75) x Length (180-400) mm o 2.5-6.0kg me ka lawe ʻana o ka emi ma lalo o 6E15 a i ʻole 6E15-3E16.Loaʻa nā kikoʻī kikoʻī ma ke noi e hoʻokō i ka hopena kūpono.

Nā noi

Hoʻohana nui ʻia ʻo Indium Phosphide InP wafer no ka hana ʻana i nā ʻāpana optoelectronic, nā mana kiʻekiʻe a me nā mea uila uila kiʻekiʻe, ma ke ʻano he substrate no ka epitaxial indium-gallium-arsenide (InGaAs) e pili ana i nā mea opto-electronic.Aia nō hoʻi ʻo Indium Phosphide i ka hana ʻana no nā kumu kukui hoʻohiki maikaʻi loa i nā kamaʻilio fiber optical, nā mana kumu mana microwave, nā mea hoʻonui microwave a me nā mea puka FETs, nā modulators kiʻekiʻe a me nā mea nānā kiʻi, a me ka hoʻokele satellite a pēlā aku.

Ninau i keia manawa

Nā kikoʻī

Nā huaʻōlelo

Hōʻike ʻenehana

Indium Phosphide InP

Indium Phosphide Hoʻokahi CrystalHiki ke hāʻawi ʻia ka Wafer (InP crystal ingot a i ʻole Wafer) ma Western Minmetals (SC) Corporation me ka p-type, n-type a me semi-insulating conductivity i ka nui o 2 "3" 4" a me 6" (a hiki i 150mm) anawaena, kuhikuhi <111> a i ʻole <100> a me ka mānoanoa 350-625um me ka hoʻopau ʻana o ka ʻili o ke kaʻina hana i kālai ʻia a i ʻole ʻia a mākaukau Epi.

Indium Phosphide Polycrystallinea i ʻole Multi-Crystal ingot (InP poly ingot) i ka nui o D(60-75) x L(180-400) mm o 2.5-6.0kg me ka lawe ʻana o ka emi ma lalo o 6E15 a i ʻole 6E15-3E16.Loaʻa nā kikoʻī kikoʻī ma ke noi e hoʻokō i ka hopena kūpono.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Indium Phosphide Hoʻokahi Crystal	2"	3"	4"
2	Anawaena mm	50.8±0.5	76.2±0.5	100±0.5
3	ʻAno ulu	VGF	VGF	VGF
4	ʻO ka hoʻokō	P/Zn-doped, N/(S-doped or un-doped), Semi-insulating
5	Kūlana	(100)±0.5°, (111)±0.5°
6	Mānoanoa μm	350±25	600±25	600±25
7	Hoʻonohonoho ʻia ʻo Flat mm	16±2	22±1	32.5±1
8	ʻIkepili Flat mm	8±1	11±1	18±1
9	Ke neʻe nei cm2/Vs	50-70, >2000, (1.5-4)E3
10	ʻO ka hoʻopaʻa ʻana o ka lawe ʻana cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Kūlou μm max	10	10	10
13	Warp μm max	15	15	15
14	Wehewehe ʻana i ka Density cm-2 max	500	1000	2000
15	Hoʻopau ʻili	P/E, P/P	P/E, P/P	P/E, P/P
16	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i loko o ka ʻeke alumini.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Indium Phosphide Ingot	Poly-Crystalline a i ʻole Multi-Crystal Ingot
2	Nui Crystal	D(60-75) x L(180-400)mm
3	Paona no ka Crystal Ingot	2.5-6.0Kg
4	Ka neʻe ʻana	≥3500 knm²/VS
5	Kaʻa lawe	≤6E15, a i ʻole 6E15-3E16 kenimika^-3
6	Hoʻopili	Aia kēlā me kēia ʻeke aniani InP i loko o ka ʻeke plastik i hoʻopaʻa ʻia, 2-3 mau ʻāpana i loko o kahi pahu pahu.

Huahelu Linear	InP
Kaumaha Molekala	145.79
ʻO ka hana aniani	Zinc huila
Ka nana aku	Kaila
Lae hehee	1062°C
Lae paila	N/A
ʻO ka mānoanoa ma 300K	4.81 g/cm³
ʻAha ikehu	1.344 eV
Ke kū'ē kūʻokoʻa	8.6E7 Ω-cm
Helu CAS	22398-80-7
Helu EC	244-959-5

Indium Phosphide InP Waferua hoʻohana nui ʻia no ka hana ʻana i nā ʻāpana optoelectronic, nā mana kiʻekiʻe a me nā mea uila uila kiʻekiʻe, ma ke ʻano he substrate no ka epitaxial indium-gallium-arsenide (InGaAs) e pili ana i nā mea opto-electronic.Aia nō hoʻi ʻo Indium Phosphide i ka hana ʻana no nā kumu kukui hoʻohiki maikaʻi loa i nā kamaʻilio fiber optical, nā mana kumu mana microwave, nā mea hoʻonui microwave a me nā mea puka FETs, nā modulators kiʻekiʻe a me nā mea nānā kiʻi, a me ka hoʻokele satellite a pēlā aku.