Gallium Phosphide GaP

wehewehe

ʻO Gallium Phosphide GaP, kahi semiconductor koʻikoʻi o nā waiwai uila kū hoʻokahi e like me nā mea hui III-V ʻē aʻe, e hoʻoheheʻe ʻia i loko o ka ʻano ZB cubic thermodynamically paʻa, he mea aniani ʻalani-melemele semitransparent me kahi ʻāpana ʻāpana ʻole o 2.26 eV (300K), ʻo ia hoʻi. synthesized mai 6N 7N gallium maʻemaʻe kiʻekiʻe a me ka phosphorus, a ulu i loko o ka aniani hoʻokahi e ka ʻenehana Liquid Encapsulated Czochralski (LEC).ʻO Gallium Phosphide crystal he sulfur a i ʻole tellurium no ka loaʻa ʻana o ka semiconductor n-type, a me ka zinc doped e like me ka conductivity p-type no ka hana hou ʻana i ka wafer i makemake ʻia, nona nā noi i ka ʻōnaehana optical, uila a me nā mea optoelectronics ʻē aʻe.Hiki ke hoʻomākaukau ʻia ka wafer Crystal GaP hoʻokahi Epi-Mākaukau no kāu noi LPE, MOCVD a me MBE epitaxial.Hiki ke hāʻawi ʻia ke kiʻekiʻe kiʻekiʻe ʻo Gallium phosphide GaP wafer p-type, n-type a undoped conductivity ma Western Minmetals (SC) Corporation i ka nui o 2″a me 3” (50mm, 75mm anawaena), orientation <100>,<111 > me ka hoʻopau ʻana i ka ʻili o ke kaʻina hana i ʻoki ʻia, poni a mākaukau epi.

Nā noi

Me ka haʻahaʻa haʻahaʻa a me ka hana kiʻekiʻe i ka hoʻokuʻu ʻana i nā kukui, ua kūpono ʻo Gallium phosphide GaP wafer no nā ʻōnaehana hōʻike optical e like me ke kumu kūʻai haʻahaʻa ʻulaʻula, ʻalani, a me ka ʻōmaʻomaʻo kukui-emitting diodes (LEDs) a me ka backlight o ka melemele a me ka ʻōmaʻomaʻo LCD etc. haʻahaʻa a haʻahaʻa haʻahaʻa, hoʻohana nui ʻia ʻo GaP ma ke ʻano he substrate kumu no nā sensor infrared a me ka nānā ʻana i nā kāmela.

Ninau i keia manawa

Nā kikoʻī

Nā huaʻōlelo

Hōʻike ʻenehana

Gallium Phosphide GaP

Hiki ke hāʻawi ʻia i ka nui o 2″ a me 3” (50mm, 75mm) ke anawaena, orientation <100> ka nui o ka kristal Gallium Phosphide GaP wafer a i ʻole substrate p-type, n-type a undoped conductivity ma Western Minmetals (SC) Corporation. , <111> me ka pau 'ana o ka 'oki, lapped, etched, poli'i, epi-mākaukau i hana 'ia i loko o ka pahu wafer ho'okahi i sila 'ia i loko o ka 'eke alumina composite a i 'ole e like me ke kikoo kiko'ī i ka hopena kūpono.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Nui GaP	2"
2	Anawaena mm	50.8 ± 0.5
3	ʻAno ulu	LEC
4	ʻAno Conductivity	P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped
5	Kūlana	<1 1 1> ± 0.5°
6	Mānoanoa μm	(300-400) ± 20
7	Kū'ē Ω-cm	0.003-0.3
8	Kūlana Paʻa (OF) mm	16±1
9	Palapala Hōʻike (IF) mm	8±1
10	Hale Kaʻahele cm2/Vs min	100
11	Hoʻopaʻa ʻana i ka lawe ʻana cm^-3	(2-20) E17
12	Dislocation Density cm^-2max	2.00E+05
13	Hoʻopau ʻili	P/E, P/P
14	Hoʻopili	ʻO ka pahu wafer hoʻokahi i hoʻopaʻa ʻia i ka ʻeke alumini composite, pahu pahu ma waho

Huahelu Linear	GaP
Kaumaha Molekala	100.7
ʻO ka hana aniani	Zinc huila
ʻO ke ʻano	Paʻa ʻalani
Lae hehee	N/A
Lae paila	N/A
ʻO ka mānoanoa ma 300K	4.14 g/cm³
ʻAha ikehu	2.26 eV
Ke kū'ē kūʻokoʻa	N/A
Helu CAS	12063-98-8
Helu EC	235-057-2

ʻO Gallium Phosphide GaP Wafer, me ka haʻahaʻa o kēia manawa a me ka hana kiʻekiʻe i ka hoʻokuʻu kukui, ua kūpono ia no nā ʻōnaehana hōʻike optical e like me ke kumu kūʻai haʻahaʻa ʻulaʻula, ʻalani, a me ka ʻōmaʻomaʻo kukui-emitting diodes (LEDs) a me ka backlight o ka melemele a me ka ʻōmaʻomaʻo LCD etc. ʻO ka mālamalama, hoʻohana nui ʻia ʻo GaP ma ke ʻano he substrate kumu no nā mea ʻike infrared a me ka nānā ʻana i nā kāmela.