Gallium Arsenide GaAs

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Gallium ArsenideGaAs he a ʻO ka semiconductor hui pū ʻia o ka hui III-V i hoʻohui ʻia e ka liʻiliʻi he 6N 7N gallium maʻemaʻe kiʻekiʻe a me ka mea arsenic, a ulu ʻia ke aniani e ka VGF a i ʻole ka hana LEC mai ka polycrystalline gallium arsenide maʻemaʻe kiʻekiʻe.Me ka doping o carbon, silicon, tellurium a zinc e kiʻi i ka n-type a i ʻole p-type a me semi-insulating conductivity i kēlā me kēia, hiki ke ʻoki ʻia kahi aniani InAs cylindrical a hana ʻia i blank a me ka wafer i ka ʻoki ʻia, etched, poli a epi - mākaukau no MBE a i ʻole MOCVD epitaxial ulu.Hoʻohana nui ʻia ʻo Gallium Arsenide wafer no ka hana ʻana i nā mea uila e like me nā infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs and solar cell.Pono nā ʻāpana GaAs i nā alapine lekiō ultra-kiʻekiʻe a me ka noi hoʻololi uila wikiwiki, nā noi hoʻonui hōʻailona nāwaliwali.Eia kekahi, ʻo Gallium Arsenide substrate kahi mea kūpono no ka hana ʻana i nā ʻāpana RF, microwave frequency a me monolithic ICs, a me nā mea LED i nā kamaʻilio optical a me nā ʻōnaehana hoʻokele no ka neʻe ʻana o ka hale hoʻonaninani, ka mana kiʻekiʻe a me ke kūpaʻa wela.

Hāʻawi

Hiki ke hoʻolako ʻia ʻo Gallium Arsenide GaAs ma Western Minmetals (SC) Corporation ma ke ʻano he puʻupuʻu polycrystalline a i ʻole ka wafer aniani hoʻokahi i ʻoki ʻia, etched, poli, a i ʻole epi-mākaukau wafers i ka nui o 2” 3” 4” a me 6” (50mm, 75mm, 100mm, 150mm) anawaena, me ka p-type, n-type a i ole semi-insulating conductivity, a <111> a i ole <100> orientation.ʻO ka ʻōlelo kikoʻī maʻamau no ka hopena kūpono i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa.