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Gallium Antimonide GaSb

wehewehe

Gallium Antimonide GaSb, he semiconductor o ka hui III-V pūhui me ka zinc-blende lattice structure, ua synthesized e 6N 7N gallium maemae kiʻekiʻe a me nā mea antimony, a ulu i ke aniani ma ka LEC ala mai directionally frozen polycrystalline ingot a VGF ala me EPD<1000cm-3.Hiki ke ʻokiʻoki ʻia ka wafer GaSb a hana ʻia ma hope mai ka ingot crystalline hoʻokahi me ka kūlike kiʻekiʻe o nā ʻāpana uila, ʻokoʻa a me nā hale lattice mau, a me ka haʻahaʻa haʻahaʻa haʻahaʻa, ʻoi aku ka nui o ka refractive index ma mua o nā pūhui non-metallic ʻē aʻe.Hiki ke hana ʻia ʻo GaSb me kahi koho ākea ma ke ʻano kikoʻī a i ʻole ka hoʻonohonoho ʻana, haʻahaʻa a kiʻekiʻe paha o ka doped concentrate, hoʻopau ʻili maikaʻi a no ka MBE a i ʻole MOCVD epitaxial ulu.Ke hoʻohana ʻia nei ka substrate Gallium Antimonide i nā kiʻi kiʻi ʻokiʻoki loa a me nā noi optoelectronic e like me ka hana ʻana o nā mea ʻike kiʻi, nā mea ʻike infrared me ke ola lōʻihi, kiʻekiʻe kiʻekiʻe a me ka hilinaʻi, photoresist component, infrared LEDs a me nā lasers, transistors, thermal photovoltaic cell. a me nā ʻōnaehana thermo-photovoltaic.

Hāʻawi

Hiki ke hāʻawi ʻia ʻo Gallium Antimonide GaSb ma Western Minmetals (SC) Corporation me ke ʻano n-type, p-type a undoped semi-insulating conductivity i ka nui o 2" 3" a me 4" (50mm, 75mm, 100mm) anawaena, kuhikuhi <111> a i ʻole <100>, a me ka hoʻopau ʻili wafer o nā mea i ʻoki ʻia, kālai ʻia, poni a i ʻole kiʻekiʻe kiʻekiʻe epitaxy hoʻopau mākaukau.ʻO nā ʻāpana āpau i kākau ʻia i ka laser no ka ʻike.I kēia manawa, hoʻopili ʻia ka polycrystalline gallium antimonide GaSb lump ma ke noi ʻana i ka hopena kūpono. 


Nā kikoʻī

Nā huaʻōlelo

Hōʻike ʻenehana

ʻO Gallium Antimonide

GaSb

GaSb-W1

Gallium Antimonide GaSbKe hoʻohana ʻia nei ka substrate i nā noi kiʻi-optic a me optoelectronic ʻoi loa e like me ka hana ʻana o nā mea ʻike kiʻi, nā mea ʻike infrared me ke ola lōʻihi, ka ʻike kiʻekiʻe a me ka hilinaʻi, ka mea photoresist, nā LED infrared a me nā lasers, transistors, thermal photovoltaic cell a me thermo - nā ʻōnaehana photovoltaic.

Nā mea Kūlana Kūlana
1 Nui 2" 3" 4"
2 Anawaena mm 50.5±0.5 76.2±0.5 100±0.5
3 ʻAno ulu LEC LEC LEC
4 ʻO ka hoʻokō P-type/Zn-doped, Un-doped, N-type/Te-doped
5 Kūlana (100)±0.5°, (111)±0.5°
6 Mānoanoa μm 500±25 600±25 800±25
7 Hoʻonohonoho ʻia ʻo Flat mm 16±2 22±1 32.5±1
8 ʻIkepili Flat mm 8±1 11±1 18±1
9 Ke neʻe nei cm2/Vs 200-3500 a i ʻole e like me ka makemake
10 ʻO ka hoʻopaʻa ʻana o ka lawe ʻana cm-3 (1-100)E17 a i ʻole e like me ka makemake
11 TTV μm max 15 15 15
12 Kūlou μm max 15 15 15
13 Warp μm max 20 20 20
14 Wehewehe ʻana i ka Density cm-2 max 500 1000 2000
15 Hoʻopau ʻili P/E, P/P P/E, P/P P/E, P/P
16 Hoʻopili Hoʻokahi pahu wafer i hoʻopaʻa ʻia i ka ʻeke Aluminum.
Huahelu Linear GaSb
Kaumaha Molekala 191.48
ʻO ka hana aniani Zinc huila
Ka nana aku Paʻa ʻeleʻele hina hina
Lae hehee 710°C
Lae paila N/A
ʻO ka mānoanoa ma 300K 5.61 g/cm3
ʻAha ikehu 0.726 eV
Ke kū'ē kūʻokoʻa 1E3 Ω-cm
Helu CAS 12064-03-8
Helu EC 235-058-8

Gallium Antimonide GaSbma Western Minmetals (SC) Hui hiki ke hāʻawi ʻia me ka n-type, p-type a undoped semi-insulating conductivity i ka nui o 2 "3" a me 4" (50mm, 75mm, 100mm) anawaena, orientation <111> a i ʻole <100 >, a me ka wafer ili hope o like-oki, etched, poni a kiʻekiʻe kiʻekiʻe epitaxy hoʻopau mākaukau.ʻO nā ʻāpana āpau i kākau ʻia i ka laser no ka ʻike.I kēia manawa, hoʻopili ʻia ka polycrystalline gallium antimonide GaSb lump ma ke noi ʻana i ka hopena kūpono. 

GaSb-W

PC-28

InP-W4

GaSb-W3

Manaʻo Kūʻai

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  • ʻAe ʻia nā hoʻoponopono Rohs/REACH
  • Nā ʻaelike hōʻike ʻole NDA
  • Kulekele Minerale Kūʻē ʻole
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Gallium Antimonide GaSb


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