Indium Arsenide InAs

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ʻO Indium arsenide InAs crystal he semiconductor hui o ka hui III-V i hoʻohui ʻia e ka liʻiliʻi o 6N 7N Indium maʻemaʻe a me Arsenic element a ulu hoʻokahi aniani e VGF a i ʻole Liquid Encapsulated Czochralski (LEC) kaʻina, ke ʻano hina hina, nā kristal cubic me ka hana zinc-blende. , wahi hehee o 942 °C.He hoʻololi pololei ʻo Indium arsenide band gap me ka gallium arsenide, a ʻo ka laula o ka band i pāpā ʻia ʻo 0.45eV (300K).Loaʻa i ka kristal InAs ke kūlike kiʻekiʻe o nā ʻāpana uila, ka lattice mau, ka mobility electron kiʻekiʻe a me ka haʻahaʻa haʻahaʻa haʻahaʻa.Hiki ke ʻoki ʻia a hana ʻia i loko o kahi aniani InAs cylindrical i ulu ʻia e VGF a i ʻole LEC i loko o ka wafer i ʻoki ʻia, etched, poli a i ʻole epi-mākaukau no ka ulu ʻana o MBE a i ʻole MOCVD epitaxial.

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ʻO Indium arsenide crystal wafer kahi substrate maikaʻi loa no ka hana ʻana i nā hāmeʻa Hall a me ka mea ʻike kahua magnetic no ka neʻe ʻana o ke keʻena kiʻekiʻe akā ʻo ka bandgap ikehu haiki, kahi mea kūpono no ke kūkulu ʻana i nā mea ʻike infrared me ka lōʻihi hawewe o 1-3.8 µm i hoʻohana ʻia i nā noi mana kiʻekiʻe. ma ka lumi wela, a me ka waena hawewe infrared super lattice lasers, waena-infrared LEDs lako hana no kona 2-14 μm hawewe lōʻihi.Eia kekahi, ʻo InAs kahi substrate kūpono e kākoʻo hou i ka heterogeneous InGaAs, InAsSb, InAsPSb & InNASSb a i ʻole AlGaSb super lattice structure etc.

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ʻO Indium Arsenide

InAs

Indium Arsenide Crystal WaferHe substrate maikaʻi loa ia no ka hana ʻana i nā hāmeʻa Hall a me ka mea ʻike kahua magnetic no ka neʻe ʻana o ke keʻena kiʻekiʻe akā ʻo ka bandgap ikehu haiki, kahi mea kūpono no ke kūkulu ʻana i nā mea ʻike infrared me ka lōʻihi hawewe o 1-3.8 µm i hoʻohana ʻia i nā noi mana kiʻekiʻe ma ka lumi wela, e like me ka mid-infrared super lattice lasers, mid-infrared LEDs mea hana no kona 2-14 μm wavelength range.Eia kekahi, ʻo InAs kahi substrate kūpono e kākoʻo hou i ka heterogeneous InGaAs, InAsSb, InAsPSb & InNASSb a i ʻole AlGaSb super lattice structure etc.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Nui	2"	3"	4"
2	Anawaena mm	50.5±0.5	76.2±0.5	100±0.5
3	ʻAno ulu	LEC	LEC	LEC
4	ʻO ka hoʻokō	P-type/Zn-doped, N-type/S-doped, Un-doped
5	Kūlana	(100)±0.5°, (111)±0.5°
6	Mānoanoa μm	500±25	600±25	800±25
7	Hoʻonohonoho ʻia ʻo Flat mm	16±2	22±2	32±2
8	ʻIkepili Flat mm	8±1	11±1	18±1
9	Ke neʻe nei cm2/Vs	60-300, ≥2000 a i ʻole e like me ka makemake
10	ʻO ka hoʻopaʻa ʻana o ka lawe ʻana cm-3	(3-80)E17 a i ʻole ≤5E16
11	TTV μm max	10	10	10
12	Kūlou μm max	10	10	10
13	Warp μm max	15	15	15
14	Wehewehe ʻana i ka Density cm-2 max	1000	2000	5000
15	Hoʻopau ʻili	P/E, P/P	P/E, P/P	P/E, P/P
16	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i ka ʻeke Aluminum.

Huahelu Linear	InAs
Kaumaha Molekala	189.74
ʻO ka hana aniani	Zinc huila
Ka nana aku	Paʻa ʻeleʻele hina hina
Lae hehee	(936-942)°C
Lae paila	N/A
ʻO ka mānoanoa ma 300K	5.67 g/cm³
ʻAha ikehu	0.354 eV
Kū'ē Kūloko	0.16 Ω-cm
Helu CAS	1303-11-3
Helu EC	215-115-3

Indium Arsenide InAsma Western Minmetals (SC) Hui hiki ke hoʻolako ʻia ma ke ʻano he polycrystalline lump a i ʻole ke aniani hoʻokahi i ʻoki ʻia, etched, poli, a i ʻole epi-ready wafers i ka nui o 2 "3" a me 4" (50mm, 75mm,100mm) anawaena, a p-type, n-type a un-doped conductivity a <111> a i ole <100> orientation.ʻO ka ʻōlelo kikoʻī maʻamau no ka hopena kūpono i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa.