ʻO Indium Antimonide InSb

wehewehe

Indium Antimonide InSb, he semiconductor o ka hui III-V crystalline pūhui me ka zinc-blende lattice structure, ua synthesized e 6N 7N maʻemaʻe kiʻekiʻe Indium a me nā mea antimony, a ulu hoʻokahi aniani ma ka VGF ala a i ʻole Liquid Encapsulated Czochralski LEC ala mai nā wahi he nui polycrystalline ingot, hiki ke ʻoki ʻia a hana ʻia i wafer a poloka ma hope.He semiconductor hoʻololi pololei ʻo InSb me kahi ʻāpana haiki liʻiliʻi o 0.17eV ma ka lumi wela, ʻike kiʻekiʻe i ka hawewe 1-5μm a me ka mobility hale kiʻekiʻe kiʻekiʻe.Indium Antimonide InSb n-type, p-type a me semi-insulating conductivity ma Western Minmetals (SC) Corporation hiki ke hāʻawi ʻia i ka nui o 1″ 2″3″ a me 4” (30mm, 50mm, 75mm, 100mm) anawaena, kuhikuhi < 111> a i ʻole <100>, a me ka hoʻopau ʻana o ka ʻili wafer i ʻoki ʻia, ʻokiʻoki ʻia, kālai ʻia a poni ʻia.Indium Antimonide InSb pahuhopu o Dia.50-80mm me un-doped n-type loaʻa pū kekahi.I kēia manawa, hoʻopilikino ʻia ka polycrystalline indium antimonide InSb ( multicrystal InSb) me ka nui o ka puʻupuʻu irregular, a i ʻole blank (15-40) x (40-80)mm, a me ka pahu pōʻai o D30-80mm i hana ʻia ma ke noi ʻana i ka hopena kūpono.

Palapala noi

ʻO ka Indium Antium AntiModide kahi mea kūpono kūpono no ka hanaʻana i nā'āpana he nui, a me nā polokalamu kele pūnaewele , kiʻekiʻe kiʻekiʻe-kaomi a me ka rotary resistivity sensor, focal planar arrays, a hoʻololi ʻia hoʻi ma ke ʻano he kumu hoʻoheheʻe terahertz a i loko o ka telescope ākea astronomical infrared etc.

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ʻO Indium Antimonide

InSb

Indium Antimonide substrate(InSb Substrate, InSb Wafer) Hiki ke hāʻawi ʻia ka n-type a i ʻole p-type ma Western Minmetals (SC) Corporation ma ka nui o 1 "2" 3" a me 4" (30, 50, 75 a me 100mm) anawaena, orientation <111> a i ʻole <100>, a me ka ili wafer o ka lapped, etched, poli hoopau.

ʻO Indium AntimonidePʻO ka olycrystalline (InSb Polycrystalline, a i ʻole multicrystal InSb) me ka nui o ka puʻupuʻu like ʻole, a i ʻole blank (15-40)x(40-80)mm i hana ʻia ma ke noi ʻana i ka hopena kūpono.

I kēia manawa, loaʻa pū kekahi Indium Antimonide Target (InSb Target) o Dia.50-80mm me ka un-doped n-type.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Indium Antimonide substrate	2"	3"	4"
2	Anawaena mm	50.5±0.5	76.2±0.5	100±0.5
3	ʻAno ulu	LEC	LEC	LEC
4	ʻO ka hoʻokō	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Kūlana	(100)±0.5°, (111)±0.5°
6	Mānoanoa μm	500±25	600±25	800±25
7	Hoʻonohonoho ʻia ʻo Flat mm	16±2	22±1	32.5±1
8	ʻIkepili Flat mm	8±1	11±1	18±1
9	Ke neʻe nei cm2/Vs	1-7E5 N/un-doped， 3E5-2E4 N/Te-doped, 8-0.6E3 a i ʻole ≤8E13 P/Ge-doped
10	ʻO ka hoʻopaʻa ʻana o ka lawe ʻana cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 a i ʻole <1E14 P/Ge-doped
11	TTV μm max	15	15	15
12	Kūlou μm max	15	15	15
13	Warp μm max	20	20	20
14	Wehewehe ʻana i ka Density cm-2 max	50	50	50
15	Hoʻopau ʻili	P/E, P/P	P/E, P/P	P/E, P/P
16	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i ka ʻeke Aluminum.

ʻAʻole.	Nā mea	Kūlana Kūlana
ʻAʻole.	Nā mea	Indium Antimonide Polycrystalline	Indium Antimonide Target
1	ʻO ka hoʻokō	Wehe ʻia	Wehe ʻia
2	Hoʻopaʻa ʻana i ka lawe ʻana cm^-3	6E13-3E14	1.9-2.1E16
3	Ke neʻe ʻana cm²/Vs	5-7E5	6.9-7.9E4
4	Nui	15-40x40-80 mm	D(50-80) mm
5	Hoʻopili	I loko o ka ʻeke alumini hui, pahu pahu ma waho

Huahelu Linear	InSb
Kaumaha Molekala	236.58
ʻO ka hana aniani	Zinc huila
Ka nana aku	Nā kristal metala hina hina
Lae hehee	527 °C
Lae paila	N/A
ʻO ka mānoanoa ma 300K	5.78 g/cm³
ʻAha ikehu	0.17 eV
Ke kū'ē kūʻokoʻa	4E(-3) Ω-cm
Helu CAS	1312-41-0
Helu EC	215-192-3

ʻO Indium Antimonide InSbʻO ka wafer kahi substrate maikaʻi loa no ka hana ʻana i nā ʻāpana a me nā mea hana hou, e like me ke kiʻi kiʻi wela kiʻekiʻe, ʻōnaehana FLIR, ʻeleʻele hale a me nā mea hopena magnetoresistance, ʻōnaehana alakaʻi infrared homing missile, pane kiʻekiʻe Infrared photodetector sensor, kiʻekiʻe. -ka mea hoʻomākeʻaka magnetic a me ka rotary resistivity sensor, focal planar arrays, a hoʻololi pū ʻia ma ke ʻano he kumu hoʻoheheʻe terahertz a i loko o ka infrared astronomical space telescope etc.