Gallium Nitride GaN

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Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite crystal structure, he binary compound direct band-gap semiconductor o ka hui III-V i hoouluia e ke kaina hana ammonothermal.Hōʻike ʻia e ka maikaʻi crystalline maikaʻi, ka conductivity thermal kiʻekiʻe, ka mobility electron kiʻekiʻe, ke kahua uila koʻikoʻi kiʻekiʻe a me ka bandgap ākea, Gallium Nitride GaN nā hiʻohiʻona makemake i nā optoelectronics a me nā noi sensing.

Nā noi

He kūpono ʻo Gallium Nitride GaN no ka hana ʻana i ka wikiwiki kiʻekiʻe kiʻekiʻe a me ka hiki ke kiʻekiʻe i nā ʻāpana LED light-emitting diodes, laser a me nā mea optoelectronics e like me nā lasers ʻōmaʻomaʻo a me ka uliuli, nā huahana transistors mobility electron kiʻekiʻe (HEMTs) a me ka mana kiʻekiʻe. a me ka ʻoihana hana ʻenehana wela wela.

Hāʻawi

Hiki ke hāʻawi ʻia ʻo Gallium Nitride GaN ma Western Minmetals (SC) Corporation i ka nui o ka wafer circular 2 inches ” a i ʻole 4 ” (50mm, 100mm) a me ka wafer square 10 × 10 a i ʻole 10 × 5 mm.ʻO kēlā me kēia ʻano nui a me nā kikoʻī no ka hopena kūpono i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa.

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Hōʻike ʻenehana

Gallium Nitride GaN

Gallium Nitride GaNma Western Minmetals (SC) Corporation hiki ke hāʻawi ʻia i ka nui o ka wafer circular 2 iniha ” a i ʻole 4 ” (50mm, 100mm) a me ka wafer square 10 × 10 a i ʻole 10 × 5 mm.ʻO kēlā me kēia ʻano nui a me nā kikoʻī no ka hopena kūpono i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa.

ʻAʻole.	Nā mea	Kūlana Kūlana
1	Kinohi	Kaapuni	Kaapuni	huinaha
2	Nui	2"	4"	--
3	Anawaena mm	50.8±0.5	100±0.5	--
4	ʻaoʻao lōʻihi mm	--	--	10x10 a i ʻole 10x5
5	ʻAno ulu	HVPE	HVPE	HVPE
6	Kūlana	mokulele C (0001)	mokulele C (0001)	mokulele C (0001)
7	ʻAno Conductivity	N-type/Si-doped, Un-doped, Semi-insulating
8	Kū'ē Ω-cm	<0.1, <0.05, >1E6
9	Mānoanoa μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Kūlou μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Hoʻopau ʻili	P/E, P/P	P/E, P/P	P/E, P/P
14	ʻAole ʻili	Mua: ≤0.2nm, Hope: 0.5-1.5μm a i ʻole ≤0.2nm
15	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i ka ʻeke Aluminum.

Huahelu Linear	ʻO GaN
Kaumaha Molekala	83.73
ʻO ka hana aniani	Zinc huila/Wurtzite
Ka nana aku	Paʻa translucent
Lae hehee	2500 °C
Lae paila	N/A
ʻO ka mānoanoa ma 300K	6.15 g/cm³
ʻAha ikehu	(3.2-3.29) eV ma 300K
Ke kū'ē kūʻokoʻa	>1E8 Ω-cm
Helu CAS	25617-97-4
Helu EC	247-129-0

Gallium Nitride GaNHe kūpono ia no ka hana ʻana i nā mea ʻokiʻoki kiʻekiʻe kiʻekiʻe a me ka hiki ke kiʻekiʻe nā kukui uila-emitting diodes LEDs, laser a me nā mea optoelectronics e like me nā lasers ʻōmaʻomaʻo a me ka uliuli, nā huahana transistors mobility electron kiʻekiʻe (HEMTs) a me nā huahana kiʻekiʻe a kiʻekiʻe. ʻoihana hana ʻenehana wela.