Gallium Antimonide GaSb

wehewehe

Gallium Antimonide GaSb, he semiconductor o ka hui III-V pūhui me ka zinc-blende lattice structure, ua synthesized e 6N 7N gallium maemae kiʻekiʻe a me nā mea antimony, a ulu i ke aniani ma ka LEC ala mai directionally frozen polycrystalline ingot a VGF ala me EPD<1000cm^-3.Hiki ke ʻokiʻoki ʻia ka wafer GaSb a hana ʻia ma hope mai ka ingot crystalline hoʻokahi me ka kūlike kiʻekiʻe o nā ʻāpana uila, ʻokoʻa a me nā hale lattice mau, a me ka haʻahaʻa haʻahaʻa haʻahaʻa, ʻoi aku ka nui o ka refractive index ma mua o nā pūhui non-metallic ʻē aʻe.Hiki ke hana ʻia ʻo GaSb me kahi koho ākea ma ke ʻano kikoʻī a i ʻole ka hoʻonohonoho ʻana, haʻahaʻa a kiʻekiʻe paha o ka doped concentrate, hoʻopau ʻili maikaʻi a no ka MBE a i ʻole MOCVD epitaxial ulu.Ke hoʻohana ʻia nei ka substrate Gallium Antimonide i nā kiʻi kiʻi ʻokiʻoki loa a me nā noi optoelectronic e like me ka hana ʻana o nā mea ʻike kiʻi, nā mea ʻike infrared me ke ola lōʻihi, kiʻekiʻe kiʻekiʻe a me ka hilinaʻi, photoresist component, infrared LEDs a me nā lasers, transistors, thermal photovoltaic cell. a me nā ʻōnaehana thermo-photovoltaic.

Hāʻawi

Hiki ke hāʻawi ʻia ʻo Gallium Antimonide GaSb ma Western Minmetals (SC) Corporation me ke ʻano n-type, p-type a undoped semi-insulating conductivity i ka nui o 2" 3" a me 4" (50mm, 75mm, 100mm) anawaena, kuhikuhi <111> a i ʻole <100>, a me ka hoʻopau ʻili wafer o nā mea i ʻoki ʻia, kālai ʻia, poni a i ʻole kiʻekiʻe kiʻekiʻe epitaxy hoʻopau mākaukau.ʻO nā ʻāpana āpau i kākau ʻia i ka laser no ka ʻike.I kēia manawa, hoʻopili ʻia ka polycrystalline gallium antimonide GaSb lump ma ke noi ʻana i ka hopena kūpono.

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Hōʻike ʻenehana

ʻO Gallium Antimonide

GaSb

Gallium Antimonide GaSbKe hoʻohana ʻia nei ka substrate i nā noi kiʻi-optic a me optoelectronic ʻoi loa e like me ka hana ʻana o nā mea ʻike kiʻi, nā mea ʻike infrared me ke ola lōʻihi, ka ʻike kiʻekiʻe a me ka hilinaʻi, ka mea photoresist, nā LED infrared a me nā lasers, transistors, thermal photovoltaic cell a me thermo - nā ʻōnaehana photovoltaic.

	Nā mea	Kūlana Kūlana
1	Nui	2"	3"	4"
2	Anawaena mm	50.5±0.5	76.2±0.5	100±0.5
3	ʻAno ulu	LEC	LEC	LEC
4	ʻO ka hoʻokō	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Kūlana	(100)±0.5°, (111)±0.5°
6	Mānoanoa μm	500±25	600±25	800±25
7	Hoʻonohonoho ʻia ʻo Flat mm	16±2	22±1	32.5±1
8	ʻIkepili Flat mm	8±1	11±1	18±1
9	Ke neʻe nei cm2/Vs	200-3500 a i ʻole e like me ka makemake
10	ʻO ka hoʻopaʻa ʻana o ka lawe ʻana cm-3	(1-100)E17 a i ʻole e like me ka makemake
11	TTV μm max	15	15	15
12	Kūlou μm max	15	15	15
13	Warp μm max	20	20	20
14	Wehewehe ʻana i ka Density cm-2 max	500	1000	2000
15	Hoʻopau ʻili	P/E, P/P	P/E, P/P	P/E, P/P
16	Hoʻopili	Hoʻokahi pahu wafer i hoʻopaʻa ʻia i ka ʻeke Aluminum.

Huahelu Linear	GaSb
Kaumaha Molekala	191.48
ʻO ka hana aniani	Zinc huila
Ka nana aku	Paʻa ʻeleʻele hina hina
Lae hehee	710°C
Lae paila	N/A
ʻO ka mānoanoa ma 300K	5.61 g/cm³
ʻAha ikehu	0.726 eV
Ke kū'ē kūʻokoʻa	1E3 Ω-cm
Helu CAS	12064-03-8
Helu EC	235-058-8

Gallium Antimonide GaSbma Western Minmetals (SC) Hui hiki ke hāʻawi ʻia me ka n-type, p-type a undoped semi-insulating conductivity i ka nui o 2 "3" a me 4" (50mm, 75mm, 100mm) anawaena, orientation <111> a i ʻole <100 >, a me ka wafer ili hope o like-oki, etched, poni a kiʻekiʻe kiʻekiʻe epitaxy hoʻopau mākaukau.ʻO nā ʻāpana āpau i kākau ʻia i ka laser no ka ʻike.I kēia manawa, hoʻopili ʻia ka polycrystalline gallium antimonide GaSb lump ma ke noi ʻana i ka hopena kūpono.