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FZ Hoʻokahi Crystal Silicon Wafer,ʻO Float-zone (FZ) Silicon he silikoni maʻemaʻe loa me ka haʻahaʻa haʻahaʻa o ka oxygen a me nā haumia kalapona i huki ʻia e ka ʻenehana hoʻomaʻemaʻe ʻana i nā wahi lana.ʻO ka FZ Floating zone kahi ʻano ulu ulu ʻana o ka kristal i ʻokoʻa i ke ʻano CZ kahi i hoʻopili ʻia ai ke aniani hua ma lalo o ka polycrystalline silicon ingot, a hoʻoheheʻe ʻia ka palena ma waena o ka kristal hua a me ka silika kristal polycrystalline e ka RF coil induction heat no ka crystallization hoʻokahi.ʻO ka RF coil a me ka wahi hoʻoheheʻe e neʻe i luna, a paʻa kahi aniani hoʻokahi ma luna o ka kristal hua e like me ia.Hoʻopaʻa ʻia ka silikona Float-zone me ka hāʻawi ʻana i ka dopant like ʻole, ka hoʻololi resistivity haʻahaʻa, kaohi ʻana i ka nui o nā haumia, ke ola o ka mea lawe nui, ka pahuhopu resistivity kiʻekiʻe a me ke silika maʻemaʻe kiʻekiʻe.ʻO ka silikona Float-zone kahi ʻokoʻa maʻemaʻe kiʻekiʻe i nā kristal i ulu ʻia e ke kaʻina Czochralski CZ.Me nā hiʻohiʻona o kēia ʻano, ʻo FZ Single Crystal Silicon ka mea kūpono no ka hoʻohana ʻana i nā mea uila uila, e like me nā diodes, thyristors, IGBTs, MEMS, diode, mea RF a me nā mana MOSFETs, a i ʻole he substrate no ka mea hoʻonā kiʻekiʻe a i ʻole nā mea ʻike maka. , nā mana mana a me nā mea naʻau, kiʻekiʻe ka pono solar cell etc.
Hāʻawi
Hiki ke hāʻawi ʻia ka FZ Single Crystal Silicon Wafer N-type a me P-type conductivity ma Western Minmetals (SC) Corporation i ka nui o 2, 3, 4, 6 a me 8 iniha (50mm, 75mm, 100mm, 125mm, 150mm a me 200mm) a hoʻonohonoho <100>, <110>, <111> me ka hoʻopau ʻana o ka ʻili o As-cut, Lapped, etched a poni ʻia i loko o ka pūʻolo pahu pahu a i ʻole cassette me ka pahu pahu ma waho.
Hōʻike ʻenehana
FZ Hoʻokahi Crystal Silicon Wafera i ʻole FZ Mono-crystal Silicon Wafer o intrinsic, n-type a me p-type conductivity ma Western Minmetals (SC) Corporation hiki ke hāʻawi ʻia ma nā ʻano nui o 2, 3, 4, 6 a me 8 iniha ke anawaena (50mm, 75mm, 100mm , 125mm, 150mm a me 200mm) a me ka laulā ākea o ka mānoanoa mai 279um a hiki i 2000um i <100>, <110>, <111> orientation me ka hoʻopau ʻana o ka ʻili o ke ʻoki, lapped, etched a poni ʻia i loko o ka pahu pahu pahu a i ʻole cassette. me ka pahu pahu ma waho.
ʻAʻole. | Nā mea | Kūlana Kūlana | ||||
1 | Nui | 2" | 3" | 4" | 5" | 6" |
2 | Anawaena mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 150±0.5 |
3 | ʻO ka hoʻokō | N/P | N/P | N/P | N/P | N/P |
4 | Kūlana | <100>, <110>, <111> | ||||
5 | Mānoanoa μm | 279, 381, 425, 525, 575, 625, 675, 725 a i ʻole e like me ka makemake | ||||
6 | Kū'ē Ω-cm | 1-3, 3-5, 40-60, 800-1000, 1000-1400 a i ʻole e like me ka makemake | ||||
7 | RRV max | 8%, 10%, 12% | ||||
8 | TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | Kakaka/Warp μm max | 30 | 30 | 30 | 30 | 30 |
10 | Hoʻopau ʻili | As-cut, L/L, P/E, P/P | ||||
11 | Hoʻopili | Pahu pahu a i ʻole cassette i loko, pahu pahu ma waho. |
hōʻailona | Si |
Helu ʻĀtoma | 14 |
Kaumaha ʻĀtoma | 28.09 |
Māhele Māhele | Metalloid |
Pūʻulu, Manawa, Block | 14, 3, P |
ʻO ka hana aniani | Daimana |
kalakala | ʻeleʻele hina |
Lae hehee | 1414°C, 1687.15 K |
Lae paila | 3265°C, 3538.15 K |
ʻO ka mānoanoa ma 300K | 2.329 g/cm3 |
Ke kū'ē kūʻokoʻa | 3.2E5 Ω-cm |
Helu CAS | 7440-21-3 |
Helu EC | 231-130-8 |
FZ Hoʻokahi Crystal Silicon, me nā hiʻohiʻona nui o ke ʻano Float-zone (FZ), he mea kūpono ia no ka hoʻohana ʻana i nā mea uila uila, e like me nā diodes, thyristors, IGBTs, MEMS, diode, RF device a me ka mana MOSFETs, a i ʻole he substrate no ka hoʻonā kiʻekiʻe. ʻāpana a i ʻole nā mea ʻike maka, nā mana mana a me nā mea ʻike, ke kiʻekiʻe o ka solar cell etc.
Manaʻo Kūʻai
FZ Silicon Wafer