Ua hōʻike ʻo Imec, ka hui noiʻi a me ka hana hou o Belgian, i nā mea hoʻohana mua o ka GaAs-based heterojunction bipolar transistor (HBT) ma 300mm Si, a me CMOS-compatible GaN-based device ma 200mm Si no nā noi hawewe mm.
Hōʻike nā hopena i ka hiki o III-V-on-Si a me GaN-on-Si ma ke ʻano he ʻenehana kūpono CMOS no ka hiki ʻana i nā modula mua-hope RF no nā noi 5G.Ua hōʻike ʻia lākou i ka hālāwai kūkā IEDM o ka makahiki i hala (Dec 2019, San Francisco) a e hōʻike ʻia i kahi hōʻike nui o Iec's Michael Peeters e pili ana i ka kamaʻilio mea kūʻai aku ma waho o ka broadband ma IEEE CCNC (10-13 Jan 2020, Las Vegas).
Ma ke kamaʻilio kelepona ʻole, me 5G ʻo ia ka hanauna e hiki mai ana, aia ka paʻi ʻana i nā alapine hana kiʻekiʻe, e neʻe ana mai nā pūʻulu sub-6GHz congested a i nā pahu hawewe mm (a ma waho aʻe).He hopena koʻikoʻi ka hoʻokomo ʻana o kēia mau pahu hawewe mm i ka ʻōnaehana pūnaewele 5G holoʻokoʻa a me nā polokalamu kelepona.No nā lawelawe kelepona a me ka Fixed Wireless Access (FWA), ua unuhi kēia i loko o nā modula mua-hope paʻakikī e hoʻouna i ka hōʻailona i ka antenna.
No ka hiki ke hana ma nā alapine hawewe mm, pono e hui pū nā modula mua o ka RF i ka wikiwiki kiʻekiʻe (e hiki ai i nā helu-data o 10Gbps a ma waho) me ka mana kiʻekiʻe.Eia kekahi, ʻo kā lākou hoʻokō ʻana i nā paʻa lima paʻa e kau i nā koi kiʻekiʻe i ko lākou ʻano kumu a me ka pono o ka mana.Ma waho aʻe o 5G, ʻaʻole hiki ke hoʻokō hou ʻia kēia mau koi me nā modula mua RF mua loa o kēia lā e hilinaʻi maʻamau i nā ʻenehana like ʻole ma waena o nā HBT e pili ana i ka GaAs no nā mea hoʻonui mana - i ulu ʻia ma nā substrates GaAs liʻiliʻi a pipiʻi.
"I mea e hiki ai i ka hanauna hope RF mua-hope modules ma mua o 5G, Imec e ʻimi i ka ʻenehana CMOS-kūpono III-V-on-Si", wahi a Nadine Collaert, ka luna hoʻomalu papahana ma Imec."Ke nānā nei ʻo Imec i ka hui pū ʻana o nā ʻāpana mua (e like me nā mana amplifiers a me nā hoʻololi) me nā kaʻa kaʻa CMOS ʻē aʻe (e like me ka circuit circuitry a i ʻole ka ʻenehana transceiver), e hōʻemi i ke kumukūʻai a me ke kumu kumu, a me ka hiki ʻana i nā topologies hybrid hou. e hoʻoponopono i ka hana a me ka pono.Ke ʻimi nei ʻo Imec i ʻelua ala ʻokoʻa: (1) InP ma Si, e kuhikuhi ana i ka hawewe mm a me nā alapine ma luna o 100GHz (nā noi 6G e hiki mai ana) a me (2) nā mea hoʻokumu ʻia ʻo GaN ma Si, e huli ana (i ka hana mua) i ka hawewe mm haʻahaʻa. nā pūʻali a me ka hoʻoponopono ʻana i nā noi e pono ai ka mana kiʻekiʻe.No nā ala ʻelua, ua loaʻa iā mākou nā mea hana mua me nā ʻano hana hoʻohiki, a ua ʻike mākou i nā ala e hoʻomaikaʻi hou ai i kā lākou mau alapine hana.
Ua hōʻike ʻia nā mea hana GaAs/InGaP HBT i ulu ʻia ma 300mm Si ma ke ʻano he hana mua i ka hiki ʻana o nā mea hana InP.Ua loaʻa mai kahi puʻupuʻu mea kīnā ʻole me lalo o 3x106cm-2 threading dislocation density ma ka hoʻohana ʻana i ke kaʻina hana III-V nano-ridge engineering (NRE) kū hoʻokahi a Imec.ʻOi aku ka maikaʻi o nā mea hana ma mua o nā mea kuhikuhi, me nā GaAs i hana ʻia ma nā substrates Si me nā papa hoʻomaha hoʻomaha hoʻomaha (SRB).Ma kahi ʻanuʻu aʻe, e ʻimi ʻia nā mea hoʻohana InP-mobility kiʻekiʻe (HBT a me HEMT).
Hōʻike ke kiʻi ma luna i ke ala NRE no ka hoʻohui ʻana o ka hybrid III-V/CMOS ma 300mm Si: (a) nano-trench formation;paʻa nā hemahema i loko o ka ʻauwaha haiki;(b) ka ulu ʻana o ka waihona HBT me ka hoʻohana ʻana i ka NRE a me (c) nā koho hoʻonohonoho ʻokoʻa no ka hoʻohui ʻana i ka hāmeʻa HBT.
Eia kekahi, ua hana ʻia nā polokalamu CMOS-compatible GaN/AlGaN ma 200mm Si i ka hoʻohālikelike ʻana i ʻekolu mau ʻano mea hana like ʻole - HEMT, MOSFET a me MISHEMT.Ua hōʻike ʻia ua ʻoi aku ka maikaʻi o nā mea MISHEMT ma mua o nā ʻano mea hana ʻē aʻe e pili ana i ka scalability a me ka hana walaʻau no ka hana kiʻekiʻe.Loaʻa nā alapine ʻokiʻoki kiʻekiʻe o fT/fmax ma kahi o 50/40 no ka lōʻihi o ka puka 300nm, e like me nā hāmeʻa GaN-on-SiC i hōʻike ʻia.Ma waho aʻe o ka hoʻonui ʻana i ka lōʻihi o ka puka, ʻo nā hopena mua me AlInN ma ke ʻano he mea pale e hōʻike i ka hiki ke hoʻomaikaʻi hou i ka hana, a no laila, e hoʻonui i ka alapine hana o ka hāmeʻa i nā pahu hawewe mm i makemake ʻia.
Ka manawa hoʻouna: 23-03-21